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Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study
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10.1063/1.4775665
/content/aip/journal/apl/102/2/10.1063/1.4775665
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775665

Figures

Image of FIG. 1.
FIG. 1.

The relaxed atomic structures of O10-O0 interfaces. The Ga atoms are in light green; the Sb atoms are in brown; the Hf atoms are in brass; and the O atoms are in red.

Image of FIG. 2.
FIG. 2.

Formation energies of various interface configurations as a function of O chemical potential.

Image of FIG. 3.
FIG. 3.

Calculated total and partial density of states of various interface configurations (O10-O3). The Fermi level is located at 0 eV.

Tables

Generic image for table
Table I.

Calculated valence band offsets (in eV) of various interface configurations.

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/content/aip/journal/apl/102/2/10.1063/1.4775665
2013-01-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775665
10.1063/1.4775665
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