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Memory diodes with nonzero crossing
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10.1063/1.4775673
/content/aip/journal/apl/102/2/10.1063/1.4775673
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775673
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffractogram of a Fe:STO film grown epitaxially on a Nb:STO (001) single crystal substrate. The inset shows a high resolution X-ray diffractogram of the same specimen around the (002) reflection.

Image of FIG. 2.
FIG. 2.

Semi-logarithmic plot (the inset in the upper left corner shows a linear plot) of I-V characteristics measured in sweep mode from −3 to +3 V (blue circles) and subsequently from +3 back to −3 V (red squares), or in alternating polarity mode (black squares). The arrows indicate the sequence of the sweep mode measurement. Currents to the left (right) of the minimum current points are negative (positive), and the voltages at the minimum current points are the OCVs. The inset in the lower right corner shows a schematic illustration of the device structure (the layers thicknesses are not to scale).

Image of FIG. 3.
FIG. 3.

The voltage measured across a Fe:STO/Nb:STO junction during sequential charging and discharging cycles at −1.5 and +1.5 V, respectively.

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/content/aip/journal/apl/102/2/10.1063/1.4775673
2013-01-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Memory diodes with nonzero crossing
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775673
10.1063/1.4775673
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