1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping
Rent:
Rent this article for
USD
10.1063/1.4775688
/content/aip/journal/apl/102/2/10.1063/1.4775688
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775688
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The SIMS depth profile of Gd, O, N, and Si elements of a representative Gd2O3:N sample as a function of etching time. (b) Core level XPS spectra of Gd-4d, for a control Gd2O3 sample and two representative Gd2O3:N samples.

Image of FIG. 2.
FIG. 2.

(a)-(c) C-V hysteresis of epitaxial Gd2O3 samples grown under different . (d) C-V hysteresis of a representative epitaxial Gd2O3:N sample grown under  ∼ 2 × 10−7 mbar.

Image of FIG. 3.
FIG. 3.

Dielectric constants and dc leakage current densities measured at 1 V for different Gd2O3 and Gd2O3:N samples as functions of ambient gas partial pressure (PX) during growth. X represents O2 in case Gd2O3 and N2O in case of Gd2O3:N layers. The lines are to guide the eyes.

Loading

Article metrics loading...

/content/aip/journal/apl/102/2/10.1063/1.4775688
2013-01-15
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775688
10.1063/1.4775688
SEARCH_EXPAND_ITEM