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Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature
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10.1063/1.4775760
/content/aip/journal/apl/102/2/10.1063/1.4775760
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775760
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the samples considered in this work.

Image of FIG. 2.
FIG. 2.

(a) TEM plan view image of titanium oxide NPs deposited on carbon coated TEM copper grids. The NPs have a mean diameter of 5 nm as evidenced by the NP size distribution graph in the inset. (b) Diffraction pattern taken on a specimen similar to the one shown in (a) but with higher density of NPs, showing that the TiO NPs are mainly amorphous. (c) and (d) represent cross section SEM images of the as-deposited and high voltage samples respectively. Although the nominal thickness of the two NP films is the same (40 nm), the different fabrication conditions used, produced films with different porosities and thus, physical thicknesses. In these two images is also clear that while single NPs are visible in (c), in (d) the film is made of large grains of the diameter of 20–30 nm.

Image of FIG. 3.
FIG. 3.

Characterization of the as-deposited sample. (a) I-V forward and backward sweeps showing the continuous transition between the HRS (forward sweep) denoted with 1 and the LRS (backward sweep) denoted with 3. The set and reset regions are denoted with 2 and 4. (b) SEM plan view image of the NP film of this sample. In the inset is shown the memory operation under pulsed regime.

Image of FIG. 4.
FIG. 4.

I-V forward and backward sweeps on the as-deposited sample showing the continuous transition between the HRS and the LRS for the first 12 sweep cycles. In the inset is shown the evolution of the HRS and LRS with the number of sweep cycles.

Image of FIG. 5.
FIG. 5.

Characterization of the high-voltage sample. (a) I-V forward and backward sweeps showing the continuous transition between the HRS (forward sweep) denoted with 1 and the LRS (backward sweep) denoted with 3. The set and reset regions are denoted with 2 and 4. (b) SEM plan view image of the NP film of this sample. Large grains are visible in agreement with Figure 2(d) . In the inset is shown the memory operation under pulsed regime.

Image of FIG. 6.
FIG. 6.

SEM images from Au contacts of the as-deposited sample: (a) Bottom contact (top view: interface with TiO NPs), (b) top contact (top view), (c) schematic of the NP memristor device evidencing the presence of protrusions from the top electrode, (d) top contact (bottom view: interface with TiO NPs), (e) SEM image of the top Au contact that was removed from the sample's surface and gives a tilted view of the protrusions region.

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/content/aip/journal/apl/102/2/10.1063/1.4775760
2013-01-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4775760
10.1063/1.4775760
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