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Top Cross sectional schematic drawing of the device as prepared by UV photolithography. Bottom: front view of a Terfenol-D/Pt/PZT/Pt device, the larger square corresponds to the gold pad for wire bonding, and the smaller square is the active device. Electrical measurements were recorded between pad 1 and pad 3 for the ME device, and between pad 1 and pad 2 for the Pt/PZT/Pt stack.
Magnetization loops of Terfenol-D thin films grown on Pt/Si and annealed at 300 °C and 500 °C.
Ferroelectric loops of the Pt/PZT/Pt stacks: before (a) and after (b) annealing of the device at 300 °C in air; Ferroelectric loops of the Terfenol-D/Pt/PZT/Pt stacks before (c) and after annealing of the device at 300 °C (d), at 400 °C (e),and at 450 °C (f).
XRD patterns of the device before and after annealing at 300 °C. The Pt and PZT layers are strongly (111) textured.
Normalized capacitance (at room temperature) as a function of dc magnetic field of the Terfenol-D/Pt/PZT/Pt device (diamonds) and of the Pt/PZT/Pt stacking (triangles). Relative permittivity was 810 for the Terfenol-D/PZT stack and 845 for the Pt/PZT/Pt stack.
Direct ME coefficient αΗ ME of the device as a function of dc magnetic field. The measurements were made at room temperature under 100 Hz ac magnetic field of 25 Oe.
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