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AFM image of In-polar InN grown for 30 s under In-rich conditions.
AFM images and corresponding depth profiles of the surface of InN grown for 30 s under N-rich [(a) before and (b) after HCl etching] and ex-N-rich (c) conditions.
X-ray photoelectron spectroscopy In 3 d core-level spectrum of ultrathin InN grown under ex-N-rich conditions.
X-ray diffraction 2θ/ω profile of 30-nm-thick InN(0001)/YSZ(111) with a two-dimensionally grown initial layer.
Electron mobility of InN ultrathin layers with and without two-dimensionally grown initial layers.
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