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Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots
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10.1063/1.4776221
/content/aip/journal/apl/102/2/10.1063/1.4776221
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776221
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the structure investigated. 7–8 ML buried InAs SAQDs are separated from an identical layer of surface InAs dots by a 50 nm AlAsSb spacer. The thickness of the GaAs1−xSbx (x = 0; 0.05) cladding layers above and below the SAQDs is 5 ML, (b) Schematic diagram of the four cladding schemes discussed.

Image of FIG. 2.
FIG. 2.

1 μm2 AFM images showing the surface morphology of 7 ML InAs deposited on (a) GaAsSb and (b) GaAs, and 8 ML InAs deposited on (c)GaAsSb and (d) GaAs. The height scale in each is 10 nm.

Image of FIG. 3.
FIG. 3.

XTEM images along a {220} zone axis showing (a) surface and buried 8 ML InAs SAQDs with cladding scheme (2) (i.e., 5 ML GaAs cladding layers above and below); (b) two buried 8 ML InAs SAQDs with cladding scheme (2) at higher magnification; (c) surface and buried 8 ML InAs SAQDs with cladding scheme (1) (i.e., 5 ML GaAs underneath and 5 ML GaAsSb above); and (d) three buried 8 ML InAs SAQDs with cladding scheme (1) at higher magnification.

Image of FIG. 4.
FIG. 4.

(a) Dependence of PL emission at 77 K on different cladding schemes for 8 ML InAs SAQDs; (b) Dependence of PL emission at 77 K on different cladding schemes for 7 ML InAs SAQDs; (c) PL peak position at 77 K as a function of the cube root of excitation power for 7 ML and 8 ML SAQDs buried in the optimized cladding scheme (1); and (d) Schematic diagram of the band structure close to the SAQDs showing the band-bending effect discussed.

Image of FIG. 5.
FIG. 5.

Time dependent PL decay traces for 8 ML InAs SAQDs in the optimized cladding scheme (1) at different detection wavelengths. The dashed line is the fitting curve for the decay trace at peak wavelength.

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/content/aip/journal/apl/102/2/10.1063/1.4776221
2013-01-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776221
10.1063/1.4776221
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