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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
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10.1063/1.4776656
/content/aip/journal/apl/102/2/10.1063/1.4776656
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776656
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

In0.53Ga0.47As MOSCAPs with HfO2/Al2O3 bilayers. (a) and (b) CV characteristics as a function of frequency; (c) and (d) Normalized parallel conductance map, showing as a function of gate voltage and frequency; (e) and (f) Dit distribution extracted using the Terman method. The insets in (e) and (f) show the extracted band bending as a function of gate voltage. The data shown in the left column, (a), (c), and (e), are from a sample subjected to pre-deposition surface treatment with cycles of hydrogen plasma and TMA. The data shown in the right column, (b), (d), and (f), are from a sample subjected to pre-deposition surface treatment with cycles of nitrogen plasma and TMA.

Image of FIG. 2.
FIG. 2.

In0.53Ga0.47As MOSCAPs with HfO2 dielectrics. (a) and (b) CV characteristics as a function of frequency; (c) and (d) normalized parallel conductance map, showing as a function of gate voltage and frequency; (e) and (f) Dit distribution extracted using the Terman method. The insets in (e) and (f) show the extracted band bending as a function of gate voltage. The data shown in the left column, (a), (c), and (e), are from a sample subjected to pre-deposition surface treatment with cycles of hydrogen plasma and TMA. The data shown in the right column, (b), (d), and (f), are from a sample subjected to pre-deposition surface treatment with cycles of nitrogen plasma and TMA. The two HfO2 films have different physical thicknesses (5.5 nm and 4.4. nm, respectively, for hydrogen and nitrogen plasma samples).

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/content/aip/journal/apl/102/2/10.1063/1.4776656
2013-01-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776656
10.1063/1.4776656
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