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(a) Typical magnetization curves of the flexible exchange biased FeGa(10 nm)/IrMn(20 nm) heterostructures measured parallel and perpendicular to the PD. (b) t IrMn and (c) t FeGa dependences of Heb for the flexible FeGa/IrMn bilayers. The curves correspond to the 1/t FeGa dependence of Heb . (d) Experimental (symbols) and simulated (continuous lines) Heb as a function of the field orientation ψ for the FeGa(10 nm)/IrMn bilayers with various t IrMn. The geometry of the magnetic anisotropies is shown in the inset of (d).
The applied strain dependence of magnetic hysteresis loops for FeGa(10 nm)/IrMn(20 nm) bilayers with magnetic field (a) parallel and (b) perpendicular to the PD. The compressive and tensile strains are applied perpendicular or parallel to the PD, as shown in the insets of (a) and (b), respectively.
The applied strain dependence of (a) loop squareness, (b) Hc , and (d) Heb for H parallel and ε perpendicular to the PD, and (d) Hc for H perpendicular and ε parallel to the PD in FeGa(10 nm)/IrMn(t IrMn) bilayers with different t IrMn.
(a) Calculated hysteresis loops under various stress-induced magnetic anisotropy fields of Kσ /Ms for the flexible exchange biased bilayer with H parallel to the PD using a modified Stoner-Wohlfarth model. The geometries of the magnetic anisotropies and the applied stresses are shown in the inset of (a). (b) The calculated loop squareness (blue line) and Heb (red line) as a function of Kσ /Ms .
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