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(a) Schematic illustration of the pulsed I-V measurement setup used to study FTCE in our high-κ III-V MOS transistors. (b) Pulsed I-V measurement [rise time (t r) = fall time (t f) = 10 μs, PW = 100 μs] on a GaAs transistor, illustrating the impact of FTCE. (c) Drive current degradation as a function of time corresponding to the pulsed I d-V g sweep shown in (b).
I d-time sweeps for (a) GaAs, (b) InP, and (c) In0.53Ga0.47As MOSFETs (W/L = 600 μm/5 μm) as a function of PW. For each substrate type, four different pulse widths were used (5 ms, 10 ms, 50 ms, 100 ms), while holding the rise time and fall time constant (0.1 μs).
(a) Strong dependence of I cp with varying fall time, while rise time is fixed at 100 ns (∼53% Icp degradation). (b) Weak dependence of I cp with varying rise time while keeping fall time fixed at 100 ns (∼11% Icp degradation). f = 1 MHz for all measurements.
(a) Charge pumped per cycle (Q cp = I cp/f) versus frequency. (b) Profile of bulk trap density (N ot) in Al2O3, extracted using the data shown in (a).
Energy distribution of D it within the In0.53Ga0.47As bandgap, extracted using the data shown in Figure 3 .
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