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Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric
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10.1063/1.4776678
/content/aip/journal/apl/102/2/10.1063/1.4776678
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776678
/content/aip/journal/apl/102/2/10.1063/1.4776678
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/content/aip/journal/apl/102/2/10.1063/1.4776678
2013-01-16
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776678
10.1063/1.4776678
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