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Fabricating Schottky diodes by using the transfer method. (a) Illustration of the process for the silicon transfer method; (i) beginning with SOI (100 nm p-type top Si and 200 nm buried oxide layer), (ii) patterning of SiWs by RIE, followed by wet etching the buried oxide layer, (iii) attach thePDMS stamp, (iv) peel off the PDMS stamp, (v) transfer the SiWs with PDMS stamp to the adhesive layer coated PET substrate, (vi) peel off the PDMS stamp, (vii) metallization with the e-beam metal evaporation to complete the fabrication. (b) A microscope image of the SBDs on the PET substrate. (c) Photographs of the Schottky diodes on the PET substrate.
(a) Current-voltage characteristics of the flexible silicon diode with/without a light illumination. The inset is the log scale of current-voltage characteristics. (b) Band diagram of silicon-metal junction; the barrier height between Al and silicon is 0.62 eV.
(a) The current change as a function of time when the diode is exposed to 1.2 mW/cm2 of light intensity and applied voltages ranging from 0.5 to 5 V, (b) the current change as a function of time when the diode is exposed to light intensity is ranged from 0.4 to 1.2 mW/cm2, (c) the variable photo response of the SBD according to light intensity.
The current change of the p-type silicon device under tensile or compressive stress.
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