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On the residual stress and fracture strength of crystalline silicon wafers
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View: Figures


Image of FIG. 1.
FIG. 1.

A schematic diagram of a full-field NIR polariscope.

Image of FIG. 2.
FIG. 2.

Residual stress maps for (a) as-cut cast mc-Si wafers, (b) post-etch cast mc-Si wafers, (d) as-cut cast monolike Si wafers, and (e) post-etch cast monolike Si wafers, and statistical distributions for (c) mc-Si wafers and (f) moonlike Si wafers. Pixel size = 64 μm in the images.

Image of FIG. 3.
FIG. 3.

Representative surface SEM images of (a) as-cut mono-like wafers and (b) post-etch wafer.

Image of FIG. 4.
FIG. 4.

Weibull distribution of fracture strength for (a) mc-Si wafers and (b) cast monolike Si wafers, in as-cut and after etching under two orthogonal bending orientations (parallel, P, and perpendicular, V) relative to saw marks.

Image of FIG. 5.
FIG. 5.

Characteristic strength for mc-Si and monolike wafers bent (a) parallel to saw marks and (b) perpendiuclar to saw marks.

Image of FIG. 6.
FIG. 6.

(a) A representative surface topographical map of a diamond wire sawn wafer measured by a 3D laser confocal microscope, and schematics of characteristic defects viewed from two prespectives: (b) perpendicular and (c) parallel directions.

Image of FIG. 7.
FIG. 7.

Distributions of the theoretically calculated defect size for (a) post-etch wafers and (b) as-cut wafers.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the residual stress and fracture strength of crystalline silicon wafers