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Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching
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10.1063/1.4776733
/content/aip/journal/apl/102/2/10.1063/1.4776733
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776733

Figures

Image of FIG. 1.
FIG. 1.

Reflectance versus wavelength plot for the textured Si surfaces. Inset: Reflectance at 600 nm of all devices.

Image of FIG. 2.
FIG. 2.

SEM images of devices: (a) K10, (b) K10T2, (c) K10T5, (d) K10T10, and (e) T10.

Image of FIG. 3.
FIG. 3.

Capacitance versus gate voltage plot of devices.

Image of FIG. 4.
FIG. 4.

Parameters extracted from C-V plot (top to bottom) (a) area factor, (b) VFB , and (c) NF .

Image of FIG. 5.
FIG. 5.

Dit versus energy plot. Inset: Dit values of devices at E V  + 0.5 eV.

Tables

Generic image for table
Table I.

Devices splits and etching time.

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/content/aip/journal/apl/102/2/10.1063/1.4776733
2013-01-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4776733
10.1063/1.4776733
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