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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
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10.1063/1.4781398
/content/aip/journal/apl/102/2/10.1063/1.4781398
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4781398
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plot of normalised integrated PL intensity per unit power at 10 K versus peak excitation power density.

Image of FIG. 2.
FIG. 2.

Normalised time integrated PL spectra for 3330 MW/cm2 per pulse (solid line) and 95 MW/cm2 per pulse (dotted line).

Image of FIG. 3.
FIG. 3.

Photoluminescence time decay curves measured for detection energy of 2.695 eV with the indicated peak power excitation densities per pulse.

Image of FIG. 4.
FIG. 4.

(a) Time integrated photoluminescence spectrum for an excitation power density of 3640 MW cm−2 pulse−1 compared with time resolved spectra taken with time windows (b) 17–89 ns, (c) 5–17 ns, (d) 2–5 ns, and (e) 0–2 ns, where zero time is at the peak of the excitation pulse.

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/content/aip/journal/apl/102/2/10.1063/1.4781398
2013-01-18
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4781398
10.1063/1.4781398
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