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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
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10.1063/1.4781398
/content/aip/journal/apl/102/2/10.1063/1.4781398
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4781398
/content/aip/journal/apl/102/2/10.1063/1.4781398
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/content/aip/journal/apl/102/2/10.1063/1.4781398
2013-01-18
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4781398
10.1063/1.4781398
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