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Spin lifetime measurements in GaAsBi thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Power dependent photoluminescence (PL) generated by a Ti:Sapphire laser tuned to 1.45 eV (ExB) for a sample temperature of 10 K. (b)Comparison of PL, normalized to the dilute bismuthide emission peak, for excitations of 1.45 eV and 1.59 eV (ExA) at 10 K and various powers, as labeled. Red lines are for ExB and blue lines for ExA excitations, respectively. (c) Power dependence of the bismuthide emission peak location at 10 K for both ExB (red down triangles) and ExA (blue up triangles).

Image of FIG. 2.
FIG. 2.

Temperature dependent Hanle data for excitation energies of (a)1.59 eV (ExA) and (b) 1.45 eV (ExB) evaluated at their respective 10 K bismuthide photoluminescence peak locations of 1.35 eV and 1.33 eV. Polarization and linewidth monotonically decrease as temperature decreases.

Image of FIG. 3.
FIG. 3.

as a function of temperature with excitation energies of (a)1.59 eV (ExA) and (b) 1.45 eV (ExB) at selected photoluminesence (PL) energies. as a function of temperature with excitation (c) ExA and (d) ExB at selected PL energies and fits (solid black lines) as described in the text. The blue filled up-triangles and red filled down-triangles, respectively, correspond to the ExA and ExB generated Hanle curves shown in Figure 2 . The size of all data points includes the standard error of the fit values.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin lifetime measurements in GaAsBi thin films