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(a) Representative PL spectra measured from the studied GaNAsP epilayers. All spectra except for the lowest one are taken with the excitation photon energy exceeding the GaP bandgap. A sharp PL feature at 2.02 eV originates from the GaP substrate as it is not observed under below GaP bandgap excitation (see the lowest spectrum). No PL related to the GaNAsP epilayer was observed in near-infrared spectral range. (b) Isotropic ODMR spectra obtained at Q-band (33 948 MHz) by monitoring the PL emissions shown in (a). The direction of the applied magnetic field is parallel to the  crystallographic direction and the ODMR intensity is normalized to the PL intensity. The ODMR signals are negative and are shown as positive in (b) for easy viewing. All ODMR spectra except the topmost one are taken with the excitation photon energy of 2.10 eV. The ODMR spectra from the sample #15 is taken under excitation at 2.33 eV. All data were obtained at 5 K.
Representative ODMR spectra measured at 5 K in (a) X-band and (b) Q-band from the GaN0.012As0.05P0.938 epilayer (sample #12). The upper-most curves in (a) and (b) are the experimental spectra measured by monitoring the total intensity of the PL emissions in the 630–710 nm spectral range. The simulated ODMR spectra from the three contributing defects are shown by the lowest three curves. The ODMR spectra simulated including the contributions of all there defects are labeled as “Σ” and are shown by the thick curves below the experimental spectra for an easy comparison. The applied magnetic field is directed parallel to the  crystallographic direction and the ODMR intensity is normalized to the PL intensity. The ODMR signals are isotropic and negative but they are shown as positive for easy viewing.
Parameters of the GaNAsP epilayers studied in this work.
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