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Schematic structure of the nc-Si ballistic electron emitter and its simple operation in a SiCl4 solution at room temperature in an N2-gas filled glove box. The effective emitting area was 3 × 4 mm2. Note that neither counter electrodes nor additive electrolytes are used.
The EDX spectrum of a deposited thin Si film. Cross sectional TEM image of the deposited Si film and the corresponding electron diffraction image are also shown in the inset. The electron acceleration voltage was 200 keV. The diffraction analyses were done at several points which were selected from the HAADF images. All obtained diffraction images were similar to each other that shown here.
The XPS spectrum of a thin Si film deposited on the emitter surface. The Si 2p peak characteristic of SiO2 bonding can be seen.
(a) Band diagram of ballistic electron emission from the nc-Si device and subsequent reduction of Si4+ ions followed by the thin Si film deposition. (b) Reduction and oxidation potential of Si/Si4+, Cl2/Cl−, and other typical substances.
(a) Schematic device structure of the nc-Si ballistic electron emitter with four line-patterned emission windows (500, 140, 100, and 180 nm in width). The actual device was fabricated such that the unit of four emission windows was arranged periodically. (b) SEM micrograph of the surface after the emitter operation. The arrayed Si wires are deposited in parallel as designed.
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