1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Light-emitting devices based on erbium-doped TiO2/p +-Si heterostructures: Engineering of electroluminescence via aluminum co-doping
Rent:
Rent this article for
USD
10.1063/1.4788679
/content/aip/journal/apl/102/2/10.1063/1.4788679
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4788679
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of (a) TiO2:(Al, Er) and (b) TiO2:Er films annealed at 650 °C for 2.5 h in O2 atmosphere.

Image of FIG. 2.
FIG. 2.

Representative HRTEM images of (a),(b) TiO2:(Al, Er) film, (c),(d) TiO2:Er film. The magnified lattice fringes for the regions 1, 2, 3, and 4 marked in the four HRTEM images are shown in the upper-right panels. (e) The table summarizing the average element contents within the anatase TiO2 grains in the TiO2:(Al, Er) and TiO2:Er films (denoted as areas X and Z, respectively) and those across the grain boundary in the TiO2:(Al, Er) films (denoted as area Y).

Image of FIG. 3.
FIG. 3.

(a) XPS spectra of the Ti 2p core level peaks for the TiO2:(Al, Er) and TiO2:Er films. (b) XPS spectrum of the Al 2p core level peak for the TiO2:(Al, Er) film.

Image of FIG. 4.
FIG. 4.

EL spectra acquired at the same injection current for the two devices based on the TiO2/p +-Si and TiO2:Al/p +-Si heterostructures, respectively.

Image of FIG. 5.
FIG. 5.

(a) Visible and IR EL spectra acquired at the same injection current for the two devices based on the TiO2:Er/p +-Si and TiO2:(Al, Er)/p +-Si heterostructures, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/102/2/10.1063/1.4788679
2013-01-18
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light-emitting devices based on erbium-doped TiO2/p+-Si heterostructures: Engineering of electroluminescence via aluminum co-doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4788679
10.1063/1.4788679
SEARCH_EXPAND_ITEM