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(a) Resistivity, sheet resistance, (b) mobility, and carrier concentration of the ISO films as a function of SiO2 RF power at a constant In2O3 DC power of 100 W. (c) Temperature dependence of the optimized ISO film from 5 K to 300 K. (d) Optical transmittance of ISO films as a function of SiO2 RF power. Inset picture shows the flexed ISO film on CPI substrate with high transparency.
(a) Synchrotron X-ray scattering results obtained from ISO/CPI sample with increasing SiO2 RF power from 30 to 50 W. (b) Cross-sectional HRTEM image of the amorphous ISO film with inset of FFT pattern. (c) Normalized XAS O K1 edge spectra with and without Si doping of In2O3, (inset) the enlargement of band edge states near ∼530 eV
Dynamic (a) outer and (b) inner bending test results of the ISO anode sputtered on CPI substrate with increasing bending cycles. Inset panel shows the dynamic outer and inner bending steps for one cycle.
(a) Cross-sectional HRTEM image obtained from FOSC with amorphous ISO anode. (b) Enlarged HRTEM images obtained from the indicated alphabet region in cross-sectional HRTEM image.
Upper panel shows the superior flexibility of FOSC with amorphous ISO anode. J-V curves of OSC and FOSC fabricated on crystalline ITO/glass (reference), ISO/CPI, and ISO/glass substrates. Inset picture of a FOSC with a flexible ISO anode attached to a round-surface.
Comparison of performance of heterojunction organic solar cells fabricated on ISO/CPI, ISO/glass, and ITO/glass substrates.
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