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Controllable low-bias negative differential resistance and rectifying behaviors induced by symmetry breaking
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10.1063/1.4788691
/content/aip/journal/apl/102/2/10.1063/1.4788691
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4788691

Figures

Image of FIG. 1.
FIG. 1.

Sketch structures of four molecules in our simulation : M1 (m = 0, n = 4), M2 (m = 1, n = 43), M3 (m = 2, n = 2), and M4 (m = 3, n = 1).

Image of FIG. 2.
FIG. 2.

The calculated I-V characteristics for models M1-M4. The inset figure is the corresponding rectifying ratios as a function of the applied bias from 0.2 to 1.4 V.

Image of FIG. 3.
FIG. 3.

The transmission spectra of M1-M4 at zero bias.

Image of FIG. 4.
FIG. 4.

The transmission coefficient, the HOMO-1, HOMO from −0.8 V to 0.8 V in step of 0.2 V. The region between two solid lines is bias window and the green part denotes the real integral area of the bias window.

Image of FIG. 5.
FIG. 5.

The electrostatic potential distribution of models M1-M4 at zero bias.

Tables

Generic image for table
Table I.

The MPSH states of HOMO-2, HOMO-1, HOMO and LUMO of M1-M4 at zero bias.

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/content/aip/journal/apl/102/2/10.1063/1.4788691
2013-01-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controllable low-bias negative differential resistance and rectifying behaviors induced by symmetry breaking
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4788691
10.1063/1.4788691
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