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Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films
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10.1063/1.4788728
/content/aip/journal/apl/102/2/10.1063/1.4788728
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4788728
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Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of ScxAl1−xN films prepared at various scandium concentrations. The scale on the y-axis is linear. (b) Dependence of FWHM of x-ray rocking curves of ScxAl1−xN films on scandium concentrations.

Image of FIG. 2.
FIG. 2.

(a) Schematic illumination of bending displacement Lb measurement with laser Doppler vibrometer. (b) Piezoelectric vibration of Sc0.41Al0.59N thin films applying sine wave signals of 1 kHz. (c) Dependence of ΔLb on applied voltage for Sc0.41Al0.59N thin films.

Image of FIG. 3.
FIG. 3.

Dependence of piezoelectric coefficient d 31 on scandium concentration for ScxAl1−xN thin films.

Image of FIG. 4.
FIG. 4.

(a) Dependence of Young's modulus of ScxAl1−xN alloys on scandium concentration. (b) Dependence of relative permittivity on scandium concentration for ScxAl1−xN thin films.

Image of FIG. 5.
FIG. 5.

(a) Dependence of power generation figure of merit on scandium concentration for ScxAl1−xN. (b) Comparison of piezoelectric coefficients (d 31) and power generation figures of merit (e* 31 2oεr) of Sc0.41Al0.59N film from this work with other reported values: from left, ScAlN, AlN, ZnO,K0.5Na0.5NbO3 (KNN), 0.3Pb(Ni0.33Nb0.67)O3−0.7Pb(Zr0.45Ti0.55)O3 (PNN-PZT), Pb(Zr0.52Ti0.48)O3 (PZT), and PMN-PT. 7,12,31,6,4

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/content/aip/journal/apl/102/2/10.1063/1.4788728
2013-01-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/2/10.1063/1.4788728
10.1063/1.4788728
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