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(a) XRD patterns of ScxAl1−xN films prepared at various scandium concentrations. The scale on the y-axis is linear. (b) Dependence of FWHM of x-ray rocking curves of ScxAl1−xN films on scandium concentrations.
(a) Schematic illumination of bending displacement Lb measurement with laser Doppler vibrometer. (b) Piezoelectric vibration of Sc0.41Al0.59N thin films applying sine wave signals of 1 kHz. (c) Dependence of ΔLb on applied voltage for Sc0.41Al0.59N thin films.
Dependence of piezoelectric coefficient d 31 on scandium concentration for ScxAl1−xN thin films.
(a) Dependence of Young's modulus of ScxAl1−xN alloys on scandium concentration. (b) Dependence of relative permittivity on scandium concentration for ScxAl1−xN thin films.
(a) Dependence of power generation figure of merit on scandium concentration for ScxAl1−xN. (b) Comparison of piezoelectric coefficients (d 31) and power generation figures of merit (e* 31 2/εoεr) of Sc0.41Al0.59N film from this work with other reported values: from left, ScAlN, AlN, ZnO,K0.5Na0.5NbO3 (KNN), 0.3Pb(Ni0.33Nb0.67)O3−0.7Pb(Zr0.45Ti0.55)O3 (PNN-PZT), Pb(Zr0.52Ti0.48)O3 (PZT), and PMN-PT. 7,12,31,6,4
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