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Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions
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View: Figures


Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of the LSTO(10)/LCMO heterojunction. The inset shows a schematic diagram of the junction structure and the circuit for electrical measurements.

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of the resistance for the LCMO film when the PMN-PT substrate is under a bias field of 0, 8, and 12 kV/cm, respectively. The results under 5 T magnetic field (0 kV/cm) were also plotted; (b) Resistance of the LCMO film at 300 K as a function of the electric bias field applied to the PMN-PT substrate under 0 T and 5 T.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics under selected bias fields measured at room temperature for (a) LSTO(10)/LCMO and (b) LSTO(15)/LCMO junctions. (c), (d) The junction resistance as a function of bias field under different forward voltage for corresponding samples.

Image of FIG. 4.
FIG. 4.

Photocurrents produced by the light of 532 nm under a bias field of 0 and 12 kV/cm for (a)LSTO(10)/LCMO and (b) LSTO(15)/LCMO junctions. Arrows signify the positions of light on and off; (c), (d) Square-root quantum efficiency as a function of photon energy for corresponding junctions under different external bias fields (strain state). Solid lines are fitting results; (e), (f) the IB height, extracted from photovoltaic effect, as a function of the external bias field for corresponding junctions.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions