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X-ray diffraction patterns of the LSTO(10)/LCMO heterojunction. The inset shows a schematic diagram of the junction structure and the circuit for electrical measurements.
(a) Temperature dependence of the resistance for the LCMO film when the PMN-PT substrate is under a bias field of 0, 8, and 12 kV/cm, respectively. The results under 5 T magnetic field (0 kV/cm) were also plotted; (b) Resistance of the LCMO film at 300 K as a function of the electric bias field applied to the PMN-PT substrate under 0 T and 5 T.
Current-voltage characteristics under selected bias fields measured at room temperature for (a) LSTO(10)/LCMO and (b) LSTO(15)/LCMO junctions. (c), (d) The junction resistance as a function of bias field under different forward voltage for corresponding samples.
Photocurrents produced by the light of 532 nm under a bias field of 0 and 12 kV/cm for (a)LSTO(10)/LCMO and (b) LSTO(15)/LCMO junctions. Arrows signify the positions of light on and off; (c), (d) Square-root quantum efficiency as a function of photon energy for corresponding junctions under different external bias fields (strain state). Solid lines are fitting results; (e), (f) the IB height, extracted from photovoltaic effect, as a function of the external bias field for corresponding junctions.
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