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The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
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10.1063/1.4807577
/content/aip/journal/apl/102/20/10.1063/1.4807577
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/20/10.1063/1.4807577
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Figures

Image of FIG. 1.
FIG. 1.

(a) Comparison of resistive switching characteristics between single HfO layer and HfO/BN bilayer in dc voltage switching. (b) Schematic structure of HfO/BN bilayer device. Distributions of (c) the switch voltage during 100 resistance switching cycles and (d) the resistance states of HRS and LRS between single HfO layer and HfO/BN bilayer.

Image of FIG. 2.
FIG. 2.

FTIR spectra of (a) HfO film and (b) BN film measured in the middle infrared region.

Image of FIG. 3.
FIG. 3.

(a) Comparison of electrical characteristics of memory devices withtypical I-V curves. (b) A plot of ln(I) vs ln(V) in LRS of HfO device. (c) A plot of ln(I) vs ln(V) in LRS of HfO/BN device.

Image of FIG. 4.
FIG. 4.

Electric field simulation in HRS and the schematic model in LRS for Pt/HfO/TiN and Pt/HfO/BN/TiN memory devices.

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/content/aip/journal/apl/102/20/10.1063/1.4807577
2013-05-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/20/10.1063/1.4807577
10.1063/1.4807577
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