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(a) Comparison of resistive switching characteristics between single HfO2 layer and HfO2/BN bilayer in dc voltage switching. (b) Schematic structure of HfO2/BN bilayer device. Distributions of (c) the switch voltage during 100 resistance switching cycles and (d) the resistance states of HRS and LRS between single HfO2 layer and HfO2/BN bilayer.
FTIR spectra of (a) HfO2 film and (b) BN film measured in the middle infrared region.
(a) Comparison of electrical characteristics of memory devices withtypical I-V curves. (b) A plot of ln(I) vs ln(V) in LRS of HfO2 device. (c) A plot of ln(I) vs ln(V) in LRS of HfO2/BN device.
Electric field simulation in HRS and the schematic model in LRS for Pt/HfO2/TiN and Pt/HfO2/BN/TiN memory devices.
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