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Two-photon nanolithography of positive photoresist thin film with ultrafast laser direct writing
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10.1063/1.4807678
/content/aip/journal/apl/102/20/10.1063/1.4807678
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/20/10.1063/1.4807678
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Process of TPNL of positive photoresist. (b) Schematic diagram of TPNL.

Image of FIG. 2.
FIG. 2.

(a) SEM image of trenches fabricated with incident laser power from 1.70 mW to 0.98 mW at 10 m/s. Every trench was scanned once. (b) Enlarged image of the trench fabricated with incident laser power of 1.08 mW at 10 m/s. (c) SEM image of the trench fabricated with incident laser power of 1.07 mW at 10 m/s. (d) Trench width vs incident laser power (line is the calculated result).

Image of FIG. 3.
FIG. 3.

(a) SEM image (45° tilted view) of trenches fabricated with incident laser power from 1.101 mW to 1.015 mW. The scanning speed was 10 m/s and every trench was scanned once. The cross section shape of trench changed from inverted trapezoid to inverted triangle. (b) Schematic diagram of the fabrication process of air-hole array with laser focus changed from −0.8 m (beneath the AZ P4620 film) to 0.6 m (above the AZ P4620 film). (c) SEM image (45° tilted view) of the fabricated air-hole array. Each air-hole was exposed 30 ms with incident laser power of 1.48 mW. (d) Diameter ratio between the top and bottom of air-hole vs height of laser focus. (e) Enlarged image (45° tilted view) of the air holes fabricated with laser focus changed from −0.8 m to −0.6 m [in the white rectangular frame of Fig. 3(c) ].

Image of FIG. 4.
FIG. 4.

(a) Schematic diagram of light distribution in glass substrate and AZ P4620 photoresist film. (b) Intensity distribution [in the black square frame of Fig. 4(a) ] under the condition of standing wave interference. is the distance from the interface between air and photoresist film. (c) SEM of trench fabricated with incident laser power of 0.330 mW at 10 m/s. It was scanned 10 times. The laser focus was lowered 100 nm from the center of the photoresist film before lithography. The height of the laser focus was elevated 20 nm after every scan.

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/content/aip/journal/apl/102/20/10.1063/1.4807678
2013-05-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-photon nanolithography of positive photoresist thin film with ultrafast laser direct writing
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/20/10.1063/1.4807678
10.1063/1.4807678
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