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Investigation of the sulfur doping profile in femtosecond-laser processed silicon
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10.1063/1.4807679
/content/aip/journal/apl/102/20/10.1063/1.4807679
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/20/10.1063/1.4807679

Figures

Image of FIG. 1.
FIG. 1.

Sulfur concentration depth profile measured with SIMS. A reference silicon sample (ion implanted sulfur with a peak concentration of 10 cm at a distance of 430 nm from the surface) is used to calibrate the signal counts.

Image of FIG. 2.
FIG. 2.

Measured reactance spectrum (crosses) and fitted equivalent circuit (black line) for sample B (processed under SF ambient) in dependence of the applied DC voltage. The individual R-CPE combinations from the equivalent circuit are displayed in colored, broken lines (enhanced online). [URL: http://dx.doi.org/10.1063/1.4807679.1]doi: 10.1063/1.4807679.1.

Image of FIG. 3.
FIG. 3.

Mott-Schottky plot for samples A and B as extracted from the fitted impedance spectra.

Image of FIG. 4.
FIG. 4.

Calculated effective doping concentrations for samples A and B. Donors are marked with open symbols.

Image of FIG. 5.
FIG. 5.

Secondary electron microscope images of (a) sample A and (b) sample B.

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/content/aip/journal/apl/102/20/10.1063/1.4807679
2013-05-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the sulfur doping profile in femtosecond-laser processed silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/20/10.1063/1.4807679
10.1063/1.4807679
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