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Sulfur concentration depth profile measured with SIMS. A reference silicon sample (ion implanted sulfur with a peak concentration of 1020 cm−3 at a distance of 430 nm from the surface) is used to calibrate the signal counts.
Measured reactance spectrum (crosses) and fitted equivalent circuit (black line) for sample B (processed under SF6 ambient) in dependence of the applied DC voltage. The individual R-CPE combinations from the equivalent circuit are displayed in colored, broken lines (enhanced online). [URL: http://dx.doi.org/10.1063/1.4807679.1]doi: 10.1063/1.4807679.1.
Mott-Schottky plot for samples A and B as extracted from the fitted impedance spectra.
Calculated effective doping concentrations for samples A and B. Donors are marked with open symbols.
Secondary electron microscope images of (a) sample A and (b) sample B.
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