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The device structures of (a) PbPc-based cell, (b) SubPc-based cell, and (c) tandem cells.
The absorption coefficient of materials used as donors and acceptors and the transmittance of ICUs with different p-doped layer thicknesses. All the layers are deposited on the glass.
J-V characteristics of (a) the top cell, bottom cell and tandem cell with the 5-nm-thick p-doped layer in the ICU, and (b) the tandem cells with different p-doped layer thicknesses in the ICUs.
(a) The short circuit current density (JSC ) as a function of the TAPC:ReO3 thickness obtained from the optical simulation and experiments. (b) Schematic device structures of tandem devices with different p-doped layer thicknesses of 5 and 100 nm. Optical intensity distributions at wavelengths of 580 nm and 740 nm are presented with an ITO thickness of 150 nm.
Open circuit voltage (VOC ) and fill factor (FF) as a function of the TAPC:ReO3 thickness in the ICUs.
Solar cell performance with different p-doped layer thicknesses in the ICU. The ideality factor (n) and dark saturation current density (JS ) are obtained by fitting the dark J-V curve with the Shockley diode equation. The calculated VOC is obtained by using Eq. (1) .
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