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In situ investigation of the channel conductance of a Li1−xCoO2 (0 < x < 0.5) ionic-electronic transistor
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10.1063/1.4807424
/content/aip/journal/apl/102/21/10.1063/1.4807424
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807424
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Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the LiCoO-based ionic-electronic transistor. Initially, the LiCoO is fully lithiated resulting in a resistive channel between the source and drain (a). As lithium is electrochemically removed, the channel resistance decreases as lithium vacancies, acceptors, are created (b).

Image of FIG. 2.
FIG. 2.

Raman spectrum of the sputtered thin film LiCoO thin film used in the ionic-electronic transistor. The characteristic E and A Raman bands for high temperature LiCoO are located at 486 cm and 596 cm, respectively.

Image of FIG. 3.
FIG. 3.

The resistance of a sputtered LiCoO thin film as it is being delithiated. As lithium is removed from LiCoO, lithium vacancies that act as acceptors are created, which decrease the resistance of the device channel. The inset shows a representative I-V curve of the ionic-electronic transistor channel.

Image of FIG. 4.
FIG. 4.

The resistance of a sputtered LiCoO thin film as it is being lithiated. As the electrochemical cell voltage is lowered, LiCoO is lithiated. This lithiation results in lithium vacancies being filled and the resistance of the device channel increases.

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/content/aip/journal/apl/102/21/10.1063/1.4807424
2013-05-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ investigation of the channel conductance of a Li1−xCoO2 (0 < x < 0.5) ionic-electronic transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807424
10.1063/1.4807424
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