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Schematic illustration of the LiCoO2-based ionic-electronic transistor. Initially, the LiCoO2 is fully lithiated resulting in a resistive channel between the source and drain (a). As lithium is electrochemically removed, the channel resistance decreases as lithium vacancies, acceptors, are created (b).
Raman spectrum of the sputtered thin film LiCoO2 thin film used in the ionic-electronic transistor. The characteristic Eg and A1g Raman bands for high temperature LiCoO2 are located at 486 cm −1 and 596 cm −1, respectively.
The resistance of a sputtered LiCoO2 thin film as it is being delithiated. As lithium is removed from LiCoO2, lithium vacancies that act as acceptors are created, which decrease the resistance of the device channel. The inset shows a representative I-V curve of the ionic-electronic transistor channel.
The resistance of a sputtered LiCoO2 thin film as it is being lithiated. As the electrochemical cell voltage is lowered, LiCoO2 is lithiated. This lithiation results in lithium vacancies being filled and the resistance of the device channel increases.
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