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Bending of FIB-grown W nanowires grown on Al substrates: (a) SEM images and (b) the bending angle as a function of the ion beam sweep number. The scale bar is 1 μm; the lines are guides to the eye.
Bending of FIB-grown W nanowires grown on isolated 30 μm-square Au pads (30 nm thick) on SiO2(200 nm)/Si substrates: (a) SEM images and (b) the bending angle as a function of the ion-beam sweep number. The ion beam current was 47 pA. The scan covered an area of 15.2 × 13.1 μm2 on the substrate and took 163 s. The scale bar is 1 μm; the lines are guides to the eye.
Scanning-strategy-dependent bending phenomena: (a) schematic diagram illustrating the position of the nanowire relative to the incident ion beam; (b) the dependence of the bending direction on the relative location of wires in the ion-beam scanning area; (c) bending images of W nanowires grown on SiO2/Si substrates taken on successive sweeps indicate bending in both +Y (−Y) and +X (−X) directions for wires near the edge of the ion-beam scanning area. The electron beam scans from −X to +X and from +Y to −Y. Note that the ion-beam scans are from +X to −X and from −Y to +Y.
Deflection expected in (a) the X direction and (b) the Y direction as a result of repulsion between the charge deposited on the nanowire and the line of charge deposited on the substrate by a single linescan, as a function of the offset of the nanowire from the center of the linescan. A wire of length 3 μm and radius 100 nm is considered, with a 6 s frame scan consisting of linescans of 30 μm and flyback time of 60 ns per line, with a 47 pA beam current incident at an angle of 40° above the substrate. The different curves depict the deflection resulting from scans at different fractions up the nanowire from its base.
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