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Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
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/content/aip/journal/apl/102/21/10.1063/1.4807768
2013-05-27
2014-10-01

Abstract

Measuring multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing enables the characterization of a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring. Using this approach, we characterize three quantum-point contact channels and compare threshold voltages for accumulation and pinch-off voltages during a single cool-down of a dilution refrigerator.

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Scitation: Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807768
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