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Analysis of electron capture at oxide traps by electric field injection
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10.1063/1.4807845
/content/aip/journal/apl/102/21/10.1063/1.4807845
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807845
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the conduction band combination of a single layer oxide on silicon. Electrons are injected from the accumulated silicon interface into the oxide band gap followed by Fowler-Nordheim injection when reaching the oxide conduction band. Gap state injection occurs in the range - Fowler-Nordheim injection beyond . For a trap level below the silicon Fermi level,  = 0.

Image of FIG. 2.
FIG. 2.

(a) Oxide conduction band for a stack with 1.5 nm SiO interlayer and an 18.5 nm thick high-k oxide with  = 25, for two values of the sharpness of the interlayer/high- interface. (b) Probability () for injection of an electron from the silicon Fermi level position at for the two potential distributions shown in (a). Band injection occurs at the end points of the graphs, beyond which is constant.

Image of FIG. 3.
FIG. 3.

Trap distribution used in the calculations.

Image of FIG. 4.
FIG. 4.

Time dependence of the flat-band voltage after switching on an oxide voltage of 4 V across the structure in Fig. 2 . Capture cross sections were set to  = 10 m and  = 10 m. (a) Interlayer/high- sharpness  = 0.05 nm. (b) Interlayer/high- sharpness  = 0.3 nm. The dashed curves originate from capture into the oxide bulk and the point dashed curves from capture into the states close to the silicon interface in Fig. 3 . The solid curve is the total, given by the sum of those two.

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/content/aip/journal/apl/102/21/10.1063/1.4807845
2013-05-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of electron capture at oxide traps by electric field injection
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807845
10.1063/1.4807845
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