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(a) High resolution X-ray diffraction of (004) planes along two azimuths, and (b) grazing incidence X-ray diffraction of (220) planes perpendicular to the surface.
(a) Bright field STEM micrograph of the bonded interface showing both Si lattice (right) and InP lattice (left). (b) Bright field STEM micrograph of the bonded stack and interface with an In inclusion. (c) GPA cartography performed through the interface (dashed yellow line as an eye guideline) showing the abrupt interface transition between the two crystal lattices.
Photoluminescence spectra at 300 K under optical pumping at 980 nm: (solid line) 300 °C BCB bonding of the same QW stack, which could be considered as a “reference;” (dotted-line) 550 °C heteroepitaxial bonding.
SEM image of a cleaved facet from a bonded InP membrane (top layer) on a SOI structure with nanopatterned lateral cladding.
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