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Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
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10.1063/1.4807890
/content/aip/journal/apl/102/21/10.1063/1.4807890
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807890
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) High resolution X-ray diffraction of (004) planes along two azimuths, and (b) grazing incidence X-ray diffraction of (220) planes perpendicular to the surface.

Image of FIG. 2.
FIG. 2.

(a) Bright field STEM micrograph of the bonded interface showing both Si lattice (right) and InP lattice (left). (b) Bright field STEM micrograph of the bonded stack and interface with an In inclusion. (c) GPA cartography performed through the interface (dashed yellow line as an eye guideline) showing the abrupt interface transition between the two crystal lattices.

Image of FIG. 3.
FIG. 3.

Photoluminescence spectra at 300 K under optical pumping at 980 nm: (solid line) 300 °C BCB bonding of the same QW stack, which could be considered as a “reference;” (dotted-line) 550 °C heteroepitaxial bonding.

Image of FIG. 4.
FIG. 4.

SEM image of a cleaved facet from a bonded InP membrane (top layer) on a SOI structure with nanopatterned lateral cladding.

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/content/aip/journal/apl/102/21/10.1063/1.4807890
2013-05-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4807890
10.1063/1.4807890
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