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Hexagonal boron nitride and 6H-SiC heterostructures
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10.1063/1.4808365
/content/aip/journal/apl/102/21/10.1063/1.4808365
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4808365
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Figures

Image of FIG. 1.
FIG. 1.

XRD θ-2θ scan of hBN/6H SiC revealing the position of the hBN (0002) reflection peak at 26.5°. The inset shows the layer structure of hBN/6H-SiC heterostructures.

Image of FIG. 2.
FIG. 2.

Photoluminescence spectra of hBN on n-type 6H-SiC measured at 10 K (top) and 300 K (bottom).

Image of FIG. 3.
FIG. 3.

(a) I-V characteristics of an hBN/n-6H-SiC heterostructure. The inset is a schematic diagram of the heterostructure used for the measurements. (b) The conduction band alignment between hBN and n-type 6H-SiC deduced from the I-V characteristics of the heterostructure.

Image of FIG. 4.
FIG. 4.

(a) Band alignment between intrinsic 6H-SiC and hBN deduced from the I-V characteristics of the heterostructures of Fig. 3 . (b) Band alignments between intrinsic hBN, 6H-SiC, and AlN constructed from independent experimental data for AlN/6H-SiC heterojunction in Ref. and the first principles calculations for hBN/AlN heterojunction.

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/content/aip/journal/apl/102/21/10.1063/1.4808365
2013-05-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hexagonal boron nitride and 6H-SiC heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4808365
10.1063/1.4808365
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