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XRD θ-2θ scan of hBN/6H SiC revealing the position of the hBN (0002) reflection peak at 26.5°. The inset shows the layer structure of hBN/6H-SiC heterostructures.
Photoluminescence spectra of hBN on n-type 6H-SiC measured at 10 K (top) and 300 K (bottom).
(a) I-V characteristics of an hBN/n-6H-SiC heterostructure. The inset is a schematic diagram of the heterostructure used for the measurements. (b) The conduction band alignment between hBN and n-type 6H-SiC deduced from the I-V characteristics of the heterostructure.
(a) Band alignment between intrinsic 6H-SiC and hBN deduced from the I-V characteristics of the heterostructures of Fig. 3 . (b) Band alignments between intrinsic hBN, 6H-SiC, and AlN constructed from independent experimental data for AlN/6H-SiC heterojunction in Ref. 20 and the first principles calculations for hBN/AlN heterojunction.
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