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(a) Schematic diagram of the SP-enhanced AlGaN-based UV LED structure with embedded Al layer. (b) Cross-sectional SEM image of LED structure grown on Si (111) substrate. Plan-view SEM images of circular-shaped holes in p-contact layer (c) before and (d) after deposition of the Al layer.
(a) Room temperature PL spectra of MQWs with and without SP-enhancement Al layer. (b) PL spectra at 10 K and 300 K of MQWs with and without the Al layer. (c) Integrated PL enhancement ratio of MQWs with the Al layer plotted against the thicknesses of the SiO2 spacer layer.
I-V characteristics of UV LEDs with and without a SP-enhancement Al layer. The inset shows the reverse-bias I-V characteristics on a semi-logarithmic scale.
(a) Room temperature EL spectra of UV LEDs with and without an Al layer. The inset shows inclined plan-view SEM images of an SP-enhanced UV LED bonded to AlN submount after the removal of the Si substrate. (b) The optical output power of UV LEDs with and without Al layer as a function of injection current.
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