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Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)
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10.1063/1.4809521
/content/aip/journal/apl/102/21/10.1063/1.4809521
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4809521
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the SP-enhanced AlGaN-based UV LED structure with embedded Al layer. (b) Cross-sectional SEM image of LED structure grown on Si (111) substrate. Plan-view SEM images of circular-shaped holes in -contact layer (c) before and (d) after deposition of the Al layer.

Image of FIG. 2.
FIG. 2.

(a) Room temperature PL spectra of MQWs with and without SP-enhancement Al layer. (b) PL spectra at 10 K and 300 K of MQWs with and without the Al layer. (c) Integrated PL enhancement ratio of MQWs with the Al layer plotted against the thicknesses of the SiO spacer layer.

Image of FIG. 3.
FIG. 3.

characteristics of UV LEDs with and without a SP-enhancement Al layer. The inset shows the reverse-bias characteristics on a semi-logarithmic scale.

Image of FIG. 4.
FIG. 4.

(a) Room temperature EL spectra of UV LEDs with and without an Al layer. The inset shows inclined plan-view SEM images of an SP-enhanced UV LED bonded to AlN submount after the removal of the Si substrate. (b) The optical output power of UV LEDs with and without Al layer as a function of injection current.

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/content/aip/journal/apl/102/21/10.1063/1.4809521
2013-05-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4809521
10.1063/1.4809521
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