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Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures
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10.1063/1.4809531
/content/aip/journal/apl/102/21/10.1063/1.4809531
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4809531
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of heterostructures with ZnO thickness of 100 nm (#1), 50 nm (#2), and 25 nm (#3).

Image of FIG. 2.
FIG. 2.

(a) Photoluminescence spectra of heterostructures with ZnO thickness of 100 nm (#1), 50 nm (#2), and 25 nm (#3) and (b) PL transition scheme for heterostructures. The transitions 1, 2, and 3 correspond to the peaks at 378, 415, and 432 nm, respectively.

Image of FIG. 3.
FIG. 3.

Polarization-voltage hysteresis loops of heterostructures with ZnO thickness of (a) 100 nm, (b) 50 nm (#2), and 25 nm (#3).

Image of FIG. 4.
FIG. 4.

(a)-(c) Current-voltage characteristics of heterostructures with ZnO thickness of 100 nm, 50 nm, and 25 nm, respectively and (d) effect of V on I-V characteristics of heterostructures with ZnO thickness of 25 nm. Inset: the resistance switching ratio (HRS/LRS) versus V.

Image of FIG. 5.
FIG. 5.

Stability of HRS and LRS with the time.

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/content/aip/journal/apl/102/21/10.1063/1.4809531
2013-05-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/21/10.1063/1.4809531
10.1063/1.4809531
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