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Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
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10.1063/1.4809576
/content/aip/journal/apl/102/22/10.1063/1.4809576
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809576
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a)-(c) SEM pictures with a tilt angle of 30° of as grown NWs for different Si flux: (a) undoped, (b) and (c) doping. (d) Cross-section SEM picture of as grown NWs with medium doping level. The scale bars are 500 nm. (e) Scheme of the growth sequence. (f) Average NW diameter and length as a function of Si flux, extracted from measurements over 10 NWs using SEM pictures similar to (a)-(c). The diameter is measured about 1 m above the surface, and the length measured from the surface to the top of the gold particle. Errors bars are the standard deviations. The solid line is a linear fit of the diameter vs. Si flux.

Image of FIG. 2.
FIG. 2.

(a) Conductivity σ (filled dots) and NW diameter (open triangles), and (b) electron density (filled dots) and FET mobility (open triangles) extracted from characteristics, as a function of the distance to the gold seed for a set of NWs grown at doping. The solid line in (a) is a linear fit of σ vs. . The error bars result from the resolution of the pictures used for extracting the diameter. (c) SEM picture of a typical NW contacted with five contacts, with the distance to the gold seed represented. The scale bar is 500 nm. (d) Typical vs. characteristics at a fixed taken for increasing and decreasing gate voltage for a NW grown at doping. (e) vs. for a set of undoped NWs. (f) (filled dots) and (open triangles) vs. for a set of NWs grown at doping. In (b), (e), and (f) the solid line is a fit of vs. , and the dashed line represents the average electron density in undoped NWs (see panel (d)). (g) Slope of vs. (extracted from linear fit) as a function of Si flux. Error bars are the 95% confidence bounds of the linear fit.

Image of FIG. 3.
FIG. 3.

(a) Scheme of the growth sequence for the NWs of types I and II: type I with bottom grown undoped and the top grown with Si flux, and type II with bottom grown with Si flux and top undoped. (b)-(c) Scanning electron microscope pictures with a tilt angle of 30° of as grown nanowires of (b) type I and (c) type II for doping. The scale bars are 500 nm long. (d) Nanowire diameter as a function of position compared to the tip for two typical NWs of type I (filled diamonds) and type II (open triangles). (e) Electron density extracted from the threshold voltage as a function of the distance to the gold seed for NWs of type I (filled diamonds) and type II (open triangles). The solid lines are linear fits of parts of each data set, and the dashed line represents the average electron density in undoped NWs (see Fig. 2(d) ).

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/content/aip/journal/apl/102/22/10.1063/1.4809576
2013-06-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809576
10.1063/1.4809576
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