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Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress
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10.1063/1.4809666
/content/aip/journal/apl/102/22/10.1063/1.4809666
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809666
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section of the device structure with regards to electrical measurements. (a) The negative-bias stress conditions (V = 10 V, V = 0 V, and V = −20 V); (b) the I measurement condition (V = 10 V and V = 0 V); and (c) the I measurement condition (V = 0 V and V = 10 V).

Image of FIG. 2.
FIG. 2.

(a) Hysteresis observed when the gate voltage was swept from −20 V to +20 V and then returned to −20 V. (b) The initial transfer curve compared to just after NB stress application (V = 10 V, V = 0 V, and V = −20 V; duration = 11 000 s), and a few minutes after release of the NB stress. The gate voltage was swept toward +20 V in all cases with a drain voltage (V) of 10 V.

Image of FIG. 3.
FIG. 3.

Transfer curves when the gate voltage was swept in both positive and negative directions for the (a) I (V = 10 V and V = 0 V), and (b) I (V = 0 V and V = 10 V) measurement conditions, whilst a NB stress was applied (V = 10 V, V = 0 V, and V = −20 V; duration = 11 000 s).

Image of FIG. 4.
FIG. 4.

Transfer curves when the gate voltage was swept in both positive and negative directions for the (a) I (V = 10 V and V = 0 V), and (b) I (V = 0 V and V = 10 V) measurement conditions, whilst a NBI stress was applied (V = 10 V, V = 0 V, and V = −20 V; duration = 11 000 s).

Image of FIG. 5.
FIG. 5.

I-V hysteresis curves for the I (V = 10 V and V = 0 V) measurement condition for different NBI stress (duration = 11 000 s).

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/content/aip/journal/apl/102/22/10.1063/1.4809666
2013-06-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809666
10.1063/1.4809666
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