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Low temperature boron doped diamond
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10.1063/1.4809671
/content/aip/journal/apl/102/22/10.1063/1.4809671
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809671

Figures

Image of FIG. 1.
FIG. 1.

SEM morphology of (a) LT-BDD with 100 nm thickness, (b) low temperature UNCD without doping, (c) LT-BDD with 600 nm thickness. All scale bars represent 100 nm. All diamond films were deposited under temperature of 460 °C.

Image of FIG. 2.
FIG. 2.

Raman spectrum of (a) LT-BDD and (b) Low temperature non-doped UNCD. Incident laser wavelength is 532 nm. Diamond films were deposited under temperature of 460 °C.

Image of FIG. 3.
FIG. 3.

Electrochemical characterization of LT-BDD and NT-BDD. (a) and (b) Cyclic voltammograms of LT- and NT-BDD. The scan rate is 100 mV/s. (c) and (d) Nyquist plots of LT- and NT-BDD. The solid/dotted curves and black/grey spectra are taken before and after ECP, respectively. The electrolyte is 5 mM Fe(CN) in 0.01M PBS buffer. ECP was carried out by cycling between −0.5 V and +1.5 V, 250 mV/s, 25 cycles in 0.1M HSO.

Image of FIG. 4.
FIG. 4.

The bode plot of LT-BDD (triangle curve) and NT-BDD (dotted curve) electrodes.

Tables

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Table I.

Values of interfacial parameters of NT- and LT-BDD before and after ECP were obtained by fitting [R(C[QR])] circuit to experimental data. The % error in the values of parameters Rs, Q1, N1, Q2, and N2 are 0%–2%, 4%–7%, 2%–5%, 15%–20%, and 2%–5%.

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/content/aip/journal/apl/102/22/10.1063/1.4809671
2013-06-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature boron doped diamond
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809671
10.1063/1.4809671
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