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SEM morphology of (a) LT-BDD with 100 nm thickness, (b) low temperature UNCD without doping, (c) LT-BDD with 600 nm thickness. All scale bars represent 100 nm. All diamond films were deposited under temperature of 460 °C.
Raman spectrum of (a) LT-BDD and (b) Low temperature non-doped UNCD. Incident laser wavelength is 532 nm. Diamond films were deposited under temperature of 460 °C.
Electrochemical characterization of LT-BDD and NT-BDD. (a) and (b) Cyclic voltammograms of LT- and NT-BDD. The scan rate is 100 mV/s. (c) and (d) Nyquist plots of LT- and NT-BDD. The solid/dotted curves and black/grey spectra are taken before and after ECP, respectively. The electrolyte is 5 mM Fe(CN)6 3−/4− in 0.01M PBS buffer. ECP was carried out by cycling between −0.5 V and +1.5 V, 250 mV/s, 25 cycles in 0.1M H2SO4.
The bode plot of LT-BDD (triangle curve) and NT-BDD (dotted curve) electrodes.
Values of interfacial parameters of NT- and LT-BDD before and after ECP were obtained by fitting [R(C[QR])] circuit to experimental data. The % error in the values of parameters Rs, Q1, N1, Q2, and N2 are 0%–2%, 4%–7%, 2%–5%, 15%–20%, and 2%–5%.
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