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Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment
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10.1063/1.4809727
/content/aip/journal/apl/102/22/10.1063/1.4809727
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809727
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of a-IGZO TFT including descriptions of the electrical and structural parameters. (W = 500 m and L = 20 m were fixed.)

Image of FIG. 2.
FIG. 2.

(a) XPS depth profiles of an untreated (open shapes) and an Ar plasma-treated (solid shapes) a-IGZO film with increasing ion etch time. XPS curve-fits of O 1s peak of (b) treated and (c) Ar plasma untreated a-IGZO active layers with increasing etch time.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of a-IGZO TFTs fabricated with varied plasma treatment window lengths (). (/ = 500/200 m and  = 2.1 V.)

Image of FIG. 4.
FIG. 4.

Channel resistances in untreated () and plasma-treated () regions with increasing driving-voltage ( - ). (inset) dependence of total resistance () characteristics and linear-fit line for extraction.

Image of FIG. 5.
FIG. 5.

Field-effect mobility () of a-IGZO TFT versus . (inset) dependence of V and .

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/content/aip/journal/apl/102/22/10.1063/1.4809727
2013-06-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809727
10.1063/1.4809727
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