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Schematic diagram of a-IGZO TFT including descriptions of the electrical and structural parameters. (W = 500 μm and Lov = 20 μm were fixed.)
(a) XPS depth profiles of an untreated (open shapes) and an Ar plasma-treated (solid shapes) a-IGZO film with increasing ion etch time. XPS curve-fits of O 1s peak of (b) treated and (c) Ar plasma untreated a-IGZO active layers with increasing etch time.
Transfer characteristics of a-IGZO TFTs fabricated with varied plasma treatment window lengths (Lp ). (W/L = 500/200 μm and VDS = 2.1 V.)
Channel resistances in untreated (rch_untreat ) and plasma-treated (rch_plasma ) regions with increasing driving-voltage (V G -V T ). (inset) Lp dependence of total resistance (RT ) characteristics and linear-fit line for rch_untreat extraction.
Field-effect mobility (μFE ) of a-IGZO TFT versus Lp . (inset) Lp dependence of VON and μFE .
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