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High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
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Image of FIG. 1.
FIG. 1.

Photoluminescence spectrum (solid line) taken at 10 K of the InAs QDs layer embedded in InAlGaAs. The inset shows a 1 × 1 m AFM image of an uncapped self-organized InAs QDs structure. Ensemble with nearly circular shaped QDs resulted in a FWHM value as low as 24.7 meV.

Image of FIG. 2.
FIG. 2.

Dependence of lasing wavelength on temperature and cavity length for broad area laser structures consisting of two active QDLs. The solid lines represent the linear fits to the experimental data. The corresponding dλ/dT coefficients are shown for every cavity. The negative value of dλ/dT is observed in the range from 40 to 60 °C for 0.590 mm long device.

Image of FIG. 3.
FIG. 3.

Temperature coefficient of emission wavelength shift on cavity length for lasers with two (filled circles) and three (filled squares) QDs layers in active region. The dashed lines are guides for the eyes. The strong reduction in wavelength shift with temperature is observed for the devices with the shortest cavities.

Image of FIG. 4.
FIG. 4.

Lasing spectra for three different cavity length of laser with 2 QDs layers and photoluminescence spectrum (dashed line) measured at room temperature. The arrows indicate the position of GS and expected at a distance of 50 meV away ES transition.

Image of FIG. 5.
FIG. 5.

Light output vs drive current of 2.4 mm long cavity and 2 m wide as cleaved ridge waveguide laser with single QDL in the active region measured at 11 °C. The inset shows the emission spectrum centered at 1550 nm for the same device.


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Table I.

Evaluated internal parameters of broad area QD lasers.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers