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Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images of fin doped by (a) standard ion-implantation and (b) plasma doping. (c) Process simulation shows a damage profile of ion-implanted fin. (d) SSRM image of conformal plasma doped fin.

Image of FIG. 2.
FIG. 2.

(a) Channel resistance of ion-implanted and plasma doped fin resistor as a function of W. (b) Current noise power spectra as a function of frequency. Plasma doped fins have less steep noise slope than ion-implanted fin. (c) Plasma doping shows approximately one decade lower normalized current noise level.

Image of FIG. 3.
FIG. 3.

I-I characteristics of FinFETs with (a) W = 25 nm and (b) W = 15 nm. At W = 15 nm, off-current is not well controlled for ion-implanted FinFETs. (c) Transfer characteristics of FinFETs doped by different doping scheme. GIDL current is suppressed for plasma doped FinFET. (d) Less V degradation is observed for plasma doped FinFET (solid: V = V = 1.9 V and open: V = V = 2.3 V). (e) Impact ionization is reduced by plasma doping.

Image of FIG. 4.
FIG. 4.

(a) For FinFETs, normalized current noise follow (g/I). (b) Normalized input gate voltage noise ( ) and (c) extracted Coulomb scattering coefficient as a function of W. Plasma doping shows lower Coulomb scattering coefficient than effective scattering coefficient for electron ( 10 Vs/C). (d) Effective mobility of FinFETs doped by ion-implantation and plasma doping.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma doping and reduced crystalline damage for conformally doped fin field effect transistors