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Cross-sectional TEM images of fin doped by (a) standard ion-implantation and (b) plasma doping. (c) Process simulation shows a damage profile of ion-implanted fin. (d) SSRM image of conformal plasma doped fin.
(a) Channel resistance of ion-implanted and plasma doped fin resistor as a function of Wfin. (b) Current noise power spectra as a function of frequency. Plasma doped fins have less steep noise slope than ion-implanted fin. (c) Plasma doping shows approximately one decade lower normalized current noise level.
ION-IOFF characteristics of FinFETs with (a) Wfin = 25 nm and (b) Wfin = 15 nm. At Wfin = 15 nm, off-current is not well controlled for ion-implanted FinFETs. (c) Transfer characteristics of FinFETs doped by different doping scheme. GIDL current is suppressed for plasma doped FinFET. (d) Less Vth degradation is observed for plasma doped FinFET (solid: VG = VD = 1.9 V and open: VG = VD = 2.3 V). (e) Impact ionization is reduced by plasma doping.
(a) For FinFETs, normalized current noise follow (gm/ID)2. (b) Normalized input gate voltage noise ( ) and (c) extracted Coulomb scattering coefficient as a function of Wfin. Plasma doping shows lower Coulomb scattering coefficient than effective scattering coefficient for electron ( 104 Vs/C). (d) Effective mobility of FinFETs doped by ion-implantation and plasma doping.
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