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Schematic of the HWCVD-MS co-deposition configuration.
Ti depth profiles for the as-deposited (∇), PLM treated (♦) Si:Ti thin films, and Ti-implanted c-Si (○) obtained from ToF-SIMS measurements.
Raman scattering spectra of as-prepared, PLM treated Si:Ti thin films. The Raman scattering spectrum of c-Si is included.
Temperature dependences of sheet resistance (a) and conductivity (b) for as deposited (○) and PLM treated (●) Si:Ti thin film and Ti implanted c-Si(△). R-T curve of p type c-Si substrate (▪) is included in (a).
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