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Insulator-to-metal transition in heavily Ti-doped silicon thin film
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10.1063/1.4809822
/content/aip/journal/apl/102/22/10.1063/1.4809822
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809822
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the HWCVD-MS co-deposition configuration.

Image of FIG. 2.
FIG. 2.

Ti depth profiles for the as-deposited (∇), PLM treated (♦) Si:Ti thin films, and Ti-implanted c-Si (○) obtained from ToF-SIMS measurements.

Image of FIG. 3.
FIG. 3.

Raman scattering spectra of as-prepared, PLM treated Si:Ti thin films. The Raman scattering spectrum of c-Si is included.

Image of FIG. 4.
FIG. 4.

Temperature dependences of sheet resistance (a) and conductivity (b) for as deposited (○) and PLM treated (●) Si:Ti thin film and Ti implanted c-Si(△). R-T curve of p type c-Si substrate (▪) is included in (a).

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/content/aip/journal/apl/102/22/10.1063/1.4809822
2013-06-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insulator-to-metal transition in heavily Ti-doped silicon thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/22/10.1063/1.4809822
10.1063/1.4809822
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