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DLTS spectra from samples A (a) and B (b) after different annealing processes using a rate window of (640 ms)−1. A reverse bias voltage of −3 V and filling pulse voltage of 3 V have been employed. C b represents the reverse bias capacitance, N D is the carrier concentration, and is the amplitude of the capacitance transient.
Measured impurity concentrations using SIMS and the concentrations of E2, E3, and E4 for the three different samples (A, B, and C).
The E2 concentration after annealing in oxygen as a function of the total Fe concentration. The fitted curve indicates that [E2] increases proportionally with [Fe] (brackets denote concentration values).
E2 and E4 concentrations after O-rich and Zn-rich annealing treatment, respectively, for the samples A, B, and C.
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