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Graphene radio frequency devices on flexible substrate
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10.1063/1.4810008
/content/aip/journal/apl/102/23/10.1063/1.4810008
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/23/10.1063/1.4810008
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the graphene RF device on polyimide. (b) Optical image of a graphene device array on the polyimide substrate.

Image of FIG. 2.
FIG. 2.

(a) Drain current as a function of top gate voltage for graphene FET on polyimide with 4m gate length. (b) Drain current as a function of drain voltage at various top gate voltage from −1 V to 1 V for graphene FET on polyimide with 4m gate length.

Image of FIG. 3.
FIG. 3.

Small-signal current gain |h21| versus frequency for a 400 nm gate length graphene RF device on polyimide with and without de-embedding. The symbols are measured results and lines are fits. The cut-off frequency after de-embedding is 10 GHz.

Image of FIG. 4.
FIG. 4.

(a) Drain current as a function of drain voltage for ungated graphene FET with channel length of 1m before bending and after bending at 5.9 mm and 1 mm radius. (b) Resistance of the ungated graphene devices as a function of bending radius. The device width is 10m. The device lengths are 1m, 0.7m, and 0.4m, respectively.

Image of FIG. 5.
FIG. 5.

(a) Drain current as a function of drain voltage for ungated graphene device with 2 m gate length measured from 4.4 K to 400 K. (b) Temperature dependence of the resistance of the ungated graphene devices on polyimide. The channel length is 1 μm, 2 m, and 3 m, respectively.

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/content/aip/journal/apl/102/23/10.1063/1.4810008
2013-06-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Graphene radio frequency devices on flexible substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/23/10.1063/1.4810008
10.1063/1.4810008
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