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Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide
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1.
1. S. C. B. Mannsfeld, B. C. K. Tee, R. M. Stoltenberg, C. V. H. H. Chen, S. Barman, B. V. O. Muir, A. N. Sokolov, C. Reese, and Z. Bao, Nature Mater. 9, 859 (2010).
http://dx.doi.org/10.1038/nmat2834
2.
2. T. Someya, Y. Kato, T. Sekitani, S. Iba, Y. Noguchi, Y. Murase, H. Kawaguchi, and T. Sakurai, Proc. Natl. Acad. Sci. U.S.A. 102, 12321 (2005).
http://dx.doi.org/10.1073/pnas.0502392102
3.
3. K. Myny, S. Steudel, S. Smout, P. Vicca, F. Furthner, B. van der Putten, A. K. Tripathi, G. H. Gelinck, J. Genoe, W. Dehaene, and P. Heremans, Org. Electron. 11, 1176 (2010).
http://dx.doi.org/10.1016/j.orgel.2010.04.013
4.
4. I. Yagi, N. Hirai, Y. Miyamoto, M. Noda, A. Imaoka, N. Yoneya, K. Nomoto, J. Kasahara, A. Yumoto, and T. Urabe, J. Soc. Inf. Disp. 16, 15 (2008).
http://dx.doi.org/10.1889/1.2835023
5.
5. G. H. Gelinck, H. Huitema, E. van Veenendaal, E. Cantatore, L. Schrijnemakers, J. van der Putten, T. Geuns, M. Beenhakkers, J. Giesbers, B. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. van Rens, and D. M. de Leeuw, Nature Mater. 3, 106 (2004).
http://dx.doi.org/10.1038/nmat1061
6.
6. F. Ante, D. Kälblein, T. Zaki, U. Zschieschang, K. Takimiya, M. Ikeda, T. Sekitani, T. Someya, J. N. Burghartz, K. Kern, and H. Klauk, Small 8, 73 (2012).
http://dx.doi.org/10.1002/smll.201101677
7.
7. U. Zschieschang, M. J. Kang, K. Takimiya, T. Sekitani, T. Someya, T. W. Canzler, A. Werner, J. Blochwitz-Nimoth, and H. Klauk, J. Mater. Chem. 22, 4273 (2012).
http://dx.doi.org/10.1039/c1jm14917b
8.
8. D. Bode, K. Myny, B. Verreet, B. van der Putten, P. Bakalov, S. Steudel, S. Smout, P. Vicca, J. Genoe, and P. Heremans, Appl. Phys. Lett. 96, 133307 (2010).
http://dx.doi.org/10.1063/1.3373630
9.
9. M. Kitamura, Y. Kuzumoto, S. Aomori, and Y. Arakawa, Appl. Phys. Express 4, 051601 (2011).
http://dx.doi.org/10.1143/APEX.4.051601
10.
10. B. K. Crone, A. Dodabalapur, R. Sarpeshkar, R. W. Filas, Y. Y. Lin, Z. Bao, J. H. ONeill, W. Li, and H. E. Katz, J. Appl. Phys. 89, 5125 (2001).
http://dx.doi.org/10.1063/1.1362635
11.
11. M. M. Ling and Z. Bao, Org. Electron. 7, 568 (2006).
http://dx.doi.org/10.1016/j.orgel.2006.09.003
12.
12. H. E. Katz, J. Johnson, A. J. Lovinger, and W. Li, J. Am. Chem. Soc. 122, 7787 (2000).
http://dx.doi.org/10.1021/ja000870g
13.
13. B. A. Jones, M. J. Ahrens, M. H. Yoon, A. Facchetti, T. J. Marks, and M. R. Wasielewski, Angew. Chem. Int. Ed. 43, 6363 (2004).
http://dx.doi.org/10.1002/anie.200461324
14.
14. H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dötz, M. Kastler, and A. Facchetti, Nature 457, 679 (2009).
http://dx.doi.org/10.1038/nature07727
15.
15. Y. Zhao, C. Di, X. Gao, Y. Hu, Y. Guo, L. Zhang, Y. Liu, J. Wang, W. Hu, and D. Zhu, Adv. Mater. 23, 2448 (2011).
http://dx.doi.org/10.1002/adma.201004588
16.
16. J. H. Oh, S. L. Suraru, W. Y. Lee, M. Könemann, H. W. Höffken, C. Röger, R. Schmidt, Y. Chung, W. C. Chen, F. Würthner, and Z. Bao, Adv. Funct. Mater. 20, 2148 (2010).
http://dx.doi.org/10.1002/adfm.201000425
17.
17. M. Stolte, S. L. Suraru, F. Würthner, J. H. Oh, Z. Bao, J. Brill, M. Könemann, J. Qu, U. Zschieschang, and H. Klauk, Proc. SPIE 7778, 777804 (2010).
http://dx.doi.org/10.1117/12.859829
18.
18. U. Zschieschang, F. Ante, D. Kälblein, T. Yamamoto, K. Takimiya, H. Kuwabara, M. Ikeda, T. Sekitani, T. Someya, J. Blochwitz-Nimoth, and H. Klauk, Org. Electron. 12, 1370 (2011).
http://dx.doi.org/10.1016/j.orgel.2011.04.018
19.
19. M. Marinkovic, D. Belaineh, V. Wagner, and D. Knipp, Adv. Mater. 24, 4005 (2012).
http://dx.doi.org/10.1002/adma.201201311
20.
20. D. Natali and M. Caironi, Adv. Mater. 24, 1357 (2012).
http://dx.doi.org/10.1002/adma.201104206
21.
21. D. Boudinet, G. L. Blevennec, C. Serbutoviez, J.-M. Verilhac, H. Yan, and G. Horowitz, J. Appl. Phys. 105, 084510 (2009).
http://dx.doi.org/10.1063/1.3110021
22.
22. C. R. Newman, C. D. Frisbie, D. A. da Silva Filho, J. L. Brédas, P. C. Ewbank, and K. R. Mann, Chem. Mater. 16, 4436 (2004).
http://dx.doi.org/10.1021/cm049391x
23.
23. T. Yamamoto and K. Takimiya, J. Am. Chem. Soc. 129, 2224 (2007).
http://dx.doi.org/10.1021/ja068429z
24.
24. P. A. Anderson, Phys. Rev. 115, 553 (1959).
http://dx.doi.org/10.1103/PhysRev.115.553
25.
25. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977).
http://dx.doi.org/10.1063/1.323539
26.
26. H. Peisert, M. Knupfer, and J. Fink, Appl. Phys. Lett. 81, 2400 (2002).
http://dx.doi.org/10.1063/1.1509472
27.
27. C. Shen and A. Kahn, J. Appl. Phys. 90, 4549 (2001).
http://dx.doi.org/10.1063/1.1406967
28.
28. H. H. Berger, J. Electrochem. Soc. 119, 507 (1972).
http://dx.doi.org/10.1149/1.2404240
29.
29. D. Schroder, Semiconductor Material and Device Characterization (Wiley, 2006).
30.
30. T. J. Richards and H. Sirringhaus, J. Appl. Phys. 102, 094510 (2007).
http://dx.doi.org/10.1063/1.2804288
31.
31. C. Tanase, E. J. Meijer, P. W. M. Blom, and D. M. De Leeuw, Org. Electron. 4, 33 (2003).
http://dx.doi.org/10.1016/S1566-1199(03)00006-5
32.
32. S. Luan and G. W. Neudeck, J. Appl. Phys. 72, 766 (1992).
http://dx.doi.org/10.1063/1.351809
33.
33. B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, J. Am. Chem. Soc. 129, 15259 (2007).
http://dx.doi.org/10.1021/ja075242e
34.
34. F. De Angelis, M. Gaspari, A. Procopio, G. Cuda, and E. Di Fabrizio, Chem. Phys. Lett. 468, 193 (2009).
http://dx.doi.org/10.1016/j.cplett.2008.12.048
35.
35. K.-J. Baeg, S.-W. Jung, D. Khim, J. Kim, D.-Y. Kim, J. B. Koo, J. R. Quinn, A. Facchetti, I.-K. You, and Y.-Y. Noh, Org. Electron. 14, 1407 (2013).
http://dx.doi.org/10.1016/j.orgel.2012.12.022
36.
36. W. Smaal, C. Kjellander, Y. Jeong, A. Tripathi, B. van der Putten, A. Facchetti, H. Yan, J. Quinn, J. Anthony, K. Myny, W. Dehaene, and G. Gelinck, Org. Electron. 13, 1686 (2012).
http://dx.doi.org/10.1016/j.orgel.2012.05.022
37.
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/content/aip/journal/apl/102/23/10.1063/1.4811127
2013-06-12
2014-07-31

Abstract

Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm/Vs at low voltages were fabricated. Transistors with channel lengths of 1 m show a transconductance of 60 mS/m, but are significantly limited by the contact resistance. Transmission line measurements in combination with contact resistance models were applied to investigate this influence. Both contact resistance and contact resistivity are proportional to the inverse gate overdrive voltage. Organic complementary ring oscillators were fabricated on a flexible plastic substrate showing record signal delays down to 17 s at a supply voltage of 2.6 V.

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Scitation: Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/23/10.1063/1.4811127
10.1063/1.4811127
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