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Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48
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10.1063/1.4811248
/content/aip/journal/apl/102/24/10.1063/1.4811248
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/24/10.1063/1.4811248
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) ARPES measurements of the π-band around the K point (upper panels), and corresponding Fermi surface images (lower panels), for selected CF coverages on MLG on SiC(0001). The inset in the upper left panel indicates the measurement direction in the graphene Brillouin Zone. (b) Sequence of MDCs evaluated at the Fermi energy for all CF coverages. The vertical dashed line indicates the position of the K point.

Image of FIG. 2.
FIG. 2.

Experimentally determined values of the carrier density plotted against the measured Dirac energy for the complete set of CF coverages (red circles). The dashed line represents charge neutrality. The well-known relationship between carrier density and Dirac energy for graphene is also plotted for comparison (blue line).

Image of FIG. 3.
FIG. 3.

Doping efficiency of MLG as a function of the Dirac energy for CF at T = 295 K (red solid line), F4-TCNQ from Coletti at T = 80 K (black dashed line), and F4-TCNQ at T = 295 K for comparison (blue dashed-dotted line). The red squares represent the doping efficiency calculated at each stage of CF deposition; the resultant molecular coverages of CF as determined from the doping model are indicated.

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/content/aip/journal/apl/102/24/10.1063/1.4811248
2013-06-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/24/10.1063/1.4811248
10.1063/1.4811248
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