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(a) TDOS (b) PDOSs of O, (c) Sn, and (d) Zn. Conduction bands are three times multiplied for better viewing. (e) IPR for the crystalline (left panel) and amorphous (right panel) ZTO.
(a) PDOSs of the conduction band region for crystalline (upper) and amorphous (lower) ZTO. (b) Partial charge densities of CBM for crystalline (left) and amorphous (right) ZTO. Isosurface level is 0.0005 electrons/Å3.
(a) XRD spectra for as-deposited and 600 °C annealed ZTO films. Inset shows the drain current (ID) vs. gate voltage (VG) curve of a TFT using the ZTO film annealed at 600 °C. (b) AFM images for as-deposited ZTO film and that annealed at 600 °C.
O K-edge XAS for as-deposited ZTO film and that annealed at 600 °C.
CNs and bond lengths of metal-O for crystalline and amorphous ZTO.
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