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The resonant tunability, enhancement, and damping of plasma waves in the two-dimensional electron gas plasmonic crystals at terahertz frequencies
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10.1063/1.4811827
/content/aip/journal/apl/102/24/10.1063/1.4811827
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/24/10.1063/1.4811827
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Figures

Image of FIG. 1.
FIG. 1.

Schematic of plasmonic crystals, (a) 1D crystal with AlGaN barrier and periodic grating gate serving as electrodes, (b) 2D plasmonic crystal with etched multichannel (type I), (c) 2D plasmonic crystal with etched dielectric layer (type II), (d) the turning of plasma wave vector at the boundary between gated and ungated channels in the unit cell of 2D crystal indicates the oblique plasmon, the polarization of incident wave is perpendicular to the gate finger, and the dimensions of the unit cell are also indicated. The length of the electrode strip is 1 m, and the thickness of AlGaN barrier is around 30 nm. is the slit width between gate fingers.

Image of FIG. 2.
FIG. 2.

The plasmonic resonant spectra of 2D (type I in Fig. 1(b) ) and 1D crystal devices and plasmon-induced field distribution. (a) The sheet electron density and the slit width are 6.1 × 10 cm (  = 0 V) and 1 m for both crystal devices. The width and period of the unit cell in the 2D devices are 0.3 m and 0.9 m (blue line), 0.6 m and 1.2 m (red line), respectively. The purple dotted line is for the 1D crystal. Meanwhile, Drudebackground absorption is also shown in dashed line. (b) The plasmon resonance after eliminating the Drude absorption from the spectra in (a) (A − A). (c) The half width at half maximum (HWHM) of resonance for the 1D and 2D crystal devices with different slit widths and channel widths : open circle is the 1D crystal with the change of slit width s, solid circle and squares are the 2D crystal with the change of slit width and channel width , respectively. The limitation of collision term (electron relaxation) is also indicated. (d) Field distributions of resonances and under the continuous wave (CW) excitation in the unit cell of 2D crystal: upper panels are the field distributions cutting at axis, and lower panels are the field distributions cutting at axis. The dipole distributions along the channels are shown by thered symbols for positive charge and pink symbols for negative charge, in the meantime, the electric field lines are shown by the dotted lines.

Image of FIG. 3.
FIG. 3.

The inter-excitation/scattering between oblique plasmons and voltage modulation effect. (a) The upper panel is the plasmon resonances after eliminating Drude-absorption: the blue and green lines are the plasmon resonances in the type II 2D crystal with dielectric layer thickness  = 250 nm, the red line is for the type I 2D crystal with period  = 0.9 m and channel width  = 0.3 m in the unit cell. The slit width is 1 m each in (a). The field distribution corresponding to the resonance of blue line is shown in lower panel with the arrows indicating the turning of plasma wavevector. (b) The transmission (right axis)/absorption (left axis) of type I 2D crystal under different gate voltages, the transmission when the channel is pinched off is also shown (green line), the slit width is 0.5 m. (c) The modulation depth of resonances and under different gate voltages in 1D crystal and type I 2D crystal. (d) The absorption enhancement of resonance in type I 2D crystal with slit width  = 0.5 m (squares) and 1 m (circles) when normalized to the one with channel width  = 0.3 m, the gate voltage is 0 V.

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/content/aip/journal/apl/102/24/10.1063/1.4811827
2013-06-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The resonant tunability, enhancement, and damping of plasma waves in the two-dimensional electron gas plasmonic crystals at terahertz frequencies
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/24/10.1063/1.4811827
10.1063/1.4811827
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