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Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system
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View: Figures


Image of FIG. 1.
FIG. 1.

Top. A schematic of the measurement configuration showing the GaAs/AlGaAs Hall bar and the remote sensing resistor, , located at the bottom of a cylindrical waveguide, within a low temperature cryostat. The panels (a) and (b) show the diagonal resistance (), Hall resistance (), and the fractional change of the remote detector resistance ( ) as functions of magnetic field, , for sample S1. (a) (left panel) and (right panel) of S1 with (red curve) and without (black curve) 48 GHz microwave illumination. (b) Concurrent measurement of with (red curve) and without (black curve) 48 GHz microwave excitation. The insets of (a) and (b) show the photoexcited and signals over a broader -range.

Image of FIG. 2.
FIG. 2.

(a) The dark and photoexcited at 48 GHz signal, and (b) the concurrently measured normalized remotely sensed signal for a high mobility GaAs/AlGaAs specimen. Various colored traces correspond to the different power levels over the range mW. The blue upward arrows in (a) point out the inflections on the oscillatory resistance.

Image of FIG. 3.
FIG. 3.

The diagonal voltage and the remote sensor resistance are exhibited for a GaAs/AlGaAs specimen S1 under 35 GHz microwave excitation. The different color curves correspond to discrete applied currents, I, through sample with A. The same color code has been used in the top and bottom panels.

Image of FIG. 4.
FIG. 4.

The diagonal voltage and the remotely sensed signal for aGaAs/AlGaAs 2DES subjected to 48 GHz microwave excitation. In plots (a) and (b), the applied current  = 1 A. Plots (c) and (d) correspond to  = 0 A. Note that the signal remains unchanged upon switching off the current through the specimen.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system