Full text loading...
Top. A schematic of the measurement configuration showing the GaAs/AlGaAs Hall bar and the remote sensing resistor, Rs , located at the bottom of a cylindrical waveguide, within a low temperature cryostat. The panels (a) and (b) show the diagonal resistance (Rxx ), Hall resistance (Rxy ), and the fractional change of the remote detector resistance ( ) as functions of magnetic field, B, for sample S1. (a) Rxx (left panel) and Rxy (right panel) of S1 with (red curve) and without (black curve) 48 GHz microwave illumination. (b) Concurrent measurement of with (red curve) and without (black curve) 48 GHz microwave excitation. The insets of (a) and (b) show the photoexcited Rxx and signals over a broader B-range.
(a) The dark and photoexcited at 48 GHz Rxx signal, and (b) the concurrently measured normalized remotely sensed signal for a high mobility GaAs/AlGaAs specimen. Various colored traces correspond to the different power levels over the range mW. The blue upward arrows in (a) point out the inflections on the oscillatory resistance.
The diagonal voltage Vxx and the remote sensor resistance Rs are exhibited for a GaAs/AlGaAs specimen S1 under 35 GHz microwave excitation. The different color curves correspond to discrete applied currents, I, through sample with μA. The same color code has been used in the top and bottom panels.
The diagonal voltage Vxx and the remotely sensed signal Rs for aGaAs/AlGaAs 2DES subjected to 48 GHz microwave excitation. In plots (a) and (b), the applied current I = 1 μA. Plots (c) and (d) correspond to I = 0 μA. Note that the Rs signal remains unchanged upon switching off the current through the specimen.
Article metrics loading...