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Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength
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View: Figures


Image of FIG. 1.
FIG. 1.

Resistivity versus time for homogeneous binary oxide film (blue) and 80 nm MoO/AlO ALD film (green) held at a constant field of 25 MV/m. Homogenous binary oxide film resistivity decays by ∼1000× in 1 day; MoO/AlO ALD film remains stable over 4 days (<3% drop).

Image of FIG. 2.
FIG. 2.

Resistivity versus precursor ratio for MoO/AlO ALD films. Resistivity can be customized over seven orders of magnitude by varying the precursor ratio.

Image of FIG. 3.
FIG. 3.

(a) Cross sectional TEM images of our film, showing the multilayer structure of the film. (b) Plan-view TEM image showing the nanoclusters of molybdenum oxide. It is likely the result of the metallic Mo deposition occurring in Volmer-Weber mode. The size of the nanoclusters was approximately 2–3 nm.

Image of FIG. 4.
FIG. 4.

IV curves for MoO/AlO ALD films with thicknesses ranging from 37 nm to 90 nm prepared using 8% Mo plotted on a FP scale (a) and a log-log scale (b). Data are consistent with FP emission.

Image of FIG. 5.
FIG. 5.

(a) Arrhenius plot of IV data at different applied electric field. From the slopes, the barrier height as a function of the applied field can be extracted (b).

Image of FIG. 6.
FIG. 6.

(a) Schematic diagram of potential wells for two, widely spaced defect states. (b) As the distance between defects decreases, the potentials wells merge and lower the voltage barrier ΔE. This mechanism explains the exponential decrease in resistivity versus MoO nanocluster density.

Image of FIG. 7.
FIG. 7.

Electron beam images of the DPG magnified onto a phosphor screen. The main image is from a DPG coated with the MoO/AlO charge-drain film. The inset is an image obtained from a DPG coated with an old homogenous binary oxide film (inset).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength