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Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
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10.1063/1.4811558
/content/aip/journal/apl/102/25/10.1063/1.4811558
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4811558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Current-voltage characteristics of 440 nm GaInN LED measured from 200 K to 450 K. The red-filled circles indicate the onset of high-level injection. (b) Determination of the onset of high-level-injection point as the transition point from an exponential slope to a sub-exponential slope.

Image of FIG. 2.
FIG. 2.

External quantum efficiency of a 440 nm GaInN LED measured from 200 K to 450 K with 10 K increments. The red circles indicate the peak-efficiency point, i.e., the onset-of-droop point.

Image of FIG. 3.
FIG. 3.

Current at the onset of high injection, correlated with the current of peak efficiency for a GaInN LED in the temperature range 200 K to 400 K.

Image of FIG. 4.
FIG. 4.

Voltage at the onset of high injection and voltage at the onset of the efficiency droop (i.e., the peak-efficiency point) as a function of temperature.

Image of FIG. 5.
FIG. 5.

Schematic conduction band diagram of a GaInN LED structure in the high-level injection regime leading to electron escape from the active region.

Image of FIG. 6.
FIG. 6.

(a) Simulated band diagram of GaInN LED at 300 K, showing the transition from low-injection to high-injection. (b) Simulated average electric field buildup in the p-type regions from 0.1 A/cm to higher current densities.

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/content/aip/journal/apl/102/25/10.1063/1.4811558
2013-06-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4811558
10.1063/1.4811558
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