Full text loading...
(a) Current-voltage characteristics of 440 nm GaInN LED measured from 200 K to 450 K. The red-filled circles indicate the onset of high-level injection. (b) Determination of the onset of high-level-injection point as the transition point from an exponential slope to a sub-exponential slope.
External quantum efficiency of a 440 nm GaInN LED measured from 200 K to 450 K with 10 K increments. The red circles indicate the peak-efficiency point, i.e., the onset-of-droop point.
Current at the onset of high injection, correlated with the current of peak efficiency for a GaInN LED in the temperature range 200 K to 400 K.
Voltage at the onset of high injection and voltage at the onset of the efficiency droop (i.e., the peak-efficiency point) as a function of temperature.
Schematic conduction band diagram of a GaInN LED structure in the high-level injection regime leading to electron escape from the active region.
(a) Simulated band diagram of GaInN LED at 300 K, showing the transition from low-injection to high-injection. (b) Simulated average electric field buildup in the p-type regions from 0.1 A/cm to higher current densities.
Article metrics loading...